Description:

HIGH EFFICIENCY SPINTRONICS DEVICES BASED ON SILICENE MATERIALS FAMILY

INV-13021

INVENTORS:  Arun Bansil, Hsin Lin, Wei-Feng Tsai, Cheng-Yi Huang, Horng-Tay Jeng, Tay-Rong Chang

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Description

Conventionally, silicene is a one-atom thick two-dimensional (2D) crystal of silicon comprising a low bucked honeycomb structure.  In order to have high frequency electronic applications (such as spinning), the silicene’s structural gaps need to be appropriately modified/controlled.  In prior art, many different methods and techniques have been used in this regards.  This invention discloses a novel procedure utilizing out of the plane external electric field (gating) to effectively control the silicene’s structural gaps to enable switchable spin polarization of states. The development and use of high efficiency spintronics devices made up of such silicene based materials is further disclosed.

 

Value Proposition

The spintronics device/procedure:

•Is highly efficient and field tunable, enabling ~100% spin polarization

•Is highly robust against weak disorder and edge imperfections

•Is better suited for room temperature applications as compared to prior art systems

•Comprises a gated silicone based spin filter to switch the output spin current

•Avoids the need of switching the magnetic domains as observed with conventional procedures

•Would be commercially useful for various high frequency electronic applications such as in spin field effect transistor, spin filter, spin separator and logical devices

 

Intellectual Property status

Provisional Application 61/712,870

License status

Available for license

Patent Information:
For Information, Contact:
Mark Saulich
Associate Director of Commercialization
Northeastern University
m.saulich@northeastern.edu
Inventors:
Arun Bansil
Tay-Rong Chang
Cheng-Yi Huang
Hsin Lin
Wei-Feng Tsai
Horng-Tay Jeng
Keywords:
Devices
Electronics
Magnetics