Description:

HIGH DENSITY ALIGNED SILICON NANOWIRE

INV-1267

INVENTORS: Sanghyun Hong, Yung Joon Jung, Hyun Young Jung, Sung-Goo Lee

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Description

In prior art, many procedures/techniques are available for fabrication of silicon structures. Some of the key procedures are laser ablation, thermal evaporation/decomposition, supercritical fluid–liquid–solid (SFLS) synthesis, and electrochemical etching. However, these procedures are associated with many possible limitations such as fabrication of nano-wires with extremely large diameters, use of noble metal catalysts, tedious pretreatment requirements, higher cost, higher process complexity, and lower surface area/density. This approach discloses a novel procedure for development of highly densified and aligned silicon nano-wire arrays (SiNWs).

Value Proposition

The procedure:

•Is simple and highly economical as compared to conventional techniques

•Comprises the use of chemical vapor deposition method, to produce high purity and high performance silicon structures

•Allows for preparation of nano-wires with a high surface area, small diameter (<5nm) and very high densities as compared to conventional procedures

•Allows for an effective control of SiNW array’s growth direction

•Completely avoids the use of any catalyst/pretreatment procedure as observed with prior-art technologies

•Effectively allows for various aspect ratios with different reaction times and directions

•Would be commercially useful for large scale production of nano-wire arrays having applications in transistors, energy storage devices and sensors (including biosensors)

 

Intellectual Property status

Provisional Application 61/663,239

License status

Available for license

Patent Information:
Category(s):
Nanotechnology
For Information, Contact:
Mark Saulich
Associate Director of Commercialization
Northeastern University
m.saulich@northeastern.edu
Inventors:
Yung Joon Jung
Sanghyun Hong
Hyun Young Jung
Sung-Goo Lee
Youngjae Yoo
Keywords:
Electronics
Energy Technology
Fabrication
Nanotechnology