Description:

Title: New Class of Atomically-Thin Layered Materials for Nanoelectronics, Optoelectronics

 

Description:

Atomically-thin layered materials have shown great potential for nanoelectronics, optoelectronics, photodetection, memory, and energy technologies.  Stacked 2D materials have also been utilized to demonstrate a variety of functional applications.

This technology involves a new type of vertical stacking between 2D crystals of molybdenum disulfide (MoS2) tri-layers (TLs) and bismuth selenide (Bi2Se3) quintuple layers (QLs).

 

This new process allows for the controlled synthesis of a uniquely new class of vertically stacked 2D heterocrystals with tunable optical and electrical properties.  The range of edge energies is highly attractive for beyond-silicon electronics and optoelectronics, especially for telecommunications wavelengths that require active electronics at the 1550 nm (0.8 eV) standard. Tunable absorbance, reflectance and photoemission in these crystals make them potentially important for various photovoltaic and photodetection applications in the visible range.

 

Benefits:

1)    Atomically thin materials (< 10 nm). The thickness of conventional silicon-based optoelectronic devices usually ranges from hundreds of nanometers to a few micrometers. This makes these materials highly attractive for flexible, wearable, transferrable, low-power, light-weight nanoelectronics, optoelectronics, nanophotonics, nanoplasmonics, energy harvesting applications.

 

2)    Reconfigurable by laser with sub-micron resolution. Arbitrary patterns can be written by focused-laser which is essential for drawing optoelectronic circuits or photonic/plasmonic crystals. Conventional silicon-based materials can only be patterned by sophisticated lithography and etching processes.

 

3)    Synthesized by chemical vapor deposition (CVD). Both MoS2 and Bi2Se3 are grown by CVD which is cheaper and more energy efficient than the production of single crystal semiconductors.

 

Patent Status:

PCT Pending Application

 

Patent Information:
For Information, Contact:
Mark Saulich
Associate Director of Commercialization
Northeastern University
m.saulich@northeastern.edu
Inventors:
Anthony Vargas
Fangze Liu
Christopher Lane
Daniel Rubin
Arun Bansil
Swastik Kar
Zachariah Hennighausen
Keywords:
Data Storage
Devices
Electronics
Energy Technology
Materials
Memory
Optoelectronics